| 摘要 |
PURPOSE: To provide a structure, wherein the diffusion of an electrode material through a cut-off layer arranged between an electrode and non-cutoff material is prevented by containing the cut-off layer, which is arranged between a metal layer and amorphous-silicon non-cutoff material and formed of a TiW:N layer. CONSTITUTION: This device includes a lower electrode 34 including a part of the first mutual metal connecting layer in an integrated circuit, a first cut-off layer 38, which is arranged on the lower electrode 34 and formed of a TiW:N layer, and a non-cutoff material layer 40, which is arranged on the first cut-off layer 38 and formed of amorphous silicon. Furthermore, a second cut-off layer 42, which is arranged on the non-cutoff material layer 10 and formed of the TiW:N layer, and an upper electrode 44, which is arranged on the second cut-off layer 42 and includes a part of the second metal layer in the integrated circuit, are included. For example, the cut-off layers 38 and 42 are formed by the reactive TiW sputtering method, under the presence of Ar gas and N2 gas at the flow-rate ratio of N2 /Ar gases of about 1/3. |
