MULTILAYER TUNGSTEN-SILICIDE AND METHOD OF THE SAME

摘要

The multi-layered tungsten silicide of a semiconductor device is mfd. by (a) forming a gate oxide film and a field oxide film on the substrate, (b) forming a polysilicon layer on the gate oxide film, (c) forming the lower layer, the middle layer and the upper layer of the tungsten-silicide, and (d) heat-treating the layers, and forming a multi-layered tungsten-silicide on the gate oxide film. The composition ratio of silicide to tungsten (Si/W) is 2.71 in the lower layer, 2.60 in the middle layer and 2.54 in the upper layer.