| 摘要 |
PURPOSE:To prevent the deterioration of symmetry in the electric characteristics of a pair of MOSFETs even when a process parameter is fluctuated during manufacturing process by a method wherein a source area is common in the MOSFETs while respective drain areas are separated from the source area by channel areas corresponding to the drain areas. CONSTITUTION:In an active area 2, channel areas 13a, 13b are formed respectively in parts positioned immediately below gate electrodes 14a, 14b. The channel areas 13a, 13b exist between an unit source area 11, common for respective MOSFETs 10, and drain areas 12a, 12b, provided for every MOSFETs 10a, 10b. The size of the channel area 13 is controlled by changing the shapes of the gate electrodes 14a, 14b. Accordingly, the gate width of the MOSFETs is not changed even when the positions of the gate electrodes 14a, 14b with respect to the position of the active area 2 are shifted slightly into a first direction X whereby the symmetical property of the MOSFETs can be maintained. |
