SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF

摘要

The semiconductor memory device has a cell array and a peripheral circuit. Source and drain impurity diffusion regions of transistors constituting the cell array have an impurity concn. lower than that of source and drain impurity diffusion regions of transistors constituting the peripheral circuit. Transistor breakdown voltage in cell array is improved. Data inverting problems and refresh characteristic deterioration due to transistor current leakage in peripheral circuit are solved.