SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To reduce an occupying space and realize a high integration by a method wherein a channel forming region between a source and a drain is made to stand vertically. CONSTITUTION:A protrusion 302 is formed on a semiconductor substrate 301. An impurity region is formed in the crest part of the protrusion and a gate oxide film 306 is formed by a thermal oxidation method and a semiconductor film 305 is formed on it. A semiconductor 307 which is formed along a trench continuously is divided into respective chips. After a gate oxide film 308 is formed by a thermal oxidation method, a film 309 of which gate wirings 310 are to be composed is formed. Then the parts of the film 309 other than the parts on the side surfaces of the protrusion are removed to form the gate wirings 310. After impurity regions 311 are formed by an ion implantation method, a layer insulating film 312 and a contact hole 313 are formed and a metal wiring 313 are formed. The side surfaces of the protrusion are used as channel regions which are made to stand vertically.