| 摘要 |
PURPOSE: To form a well region based on suitable quick heat-treating temperature/time condition by forming oxide layers on an N-type doped region and a P-type doped region, and thereafter heating a semiconductor layer in the nitriding atmosphere such as ammonia. CONSTITUTION: In a semiconductor layer 14 or a substrate 12, at least one N-type doped region 30 and at least one P-type doped region 36 are formed. The N-type doped region 30 is separated from the P-type doped region 36 by a separating region 39. Oxide layers 32 and 38, e.g. silicon dioxide, are formed on the N-type doped region 30 and the P-type doped region 36 but are not formed on the separating region 39. Thereafter, the semiconductor layer 14 is heated for a time less than 10 minutes at a temperature less than, e.g. 1150 deg.C in the nitriding temperature atmosphere, such as ammonia. Thus, opposition in the lateral direction in the conspicuous degree is avoided, and a device having higher quality can be manufactured in the reduced region of the substrate 12.
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