| 摘要 |
PURPOSE:To prevent the occurrence of implantation error by detecting an error if it exists in the measured value of beam current during the operation of ion implantation, and by making a suppresser current indicating change greater than that in the measured value of beam current an object to be detected. CONSTITUTION:When an error occurs in the measured value of beam current, a suppresser current flows between a suppresser electrode 5 and a grounding part corresponding to the error. A suppresser current detection resistance 9 is provided between the suppresser electrode 5 and the grounding part, and the voltages on both terminals of the detection resistance 9 are monitored by a suppresser current detection circuit 11. When a voltage no less than 100mV (corresponding to 1muA of suppresser current) is detected by the detection circuit 11, an output relay 12 works and a relay contact point 13 is closed, whereby interlocking is carried out.
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