| 摘要 |
PURPOSE:To improve characteristic of an element to improve photoelectric conversion efficiency by introducing a scribe groove forming process to divide a substrate into chips after the PN juction forming process and before the passivation film forming process. CONSTITUTION:A scribe groove 8 forming process for extracting a photoelectric converting apparatus of a small area from a semiconductor substrate 1 of a large area wherein at least one photoelectric converting apparatus is formed is conducted after the PN junction forming process and before the surface passivation film 3 forming process. For example, after an N-type semiconductor layer 2 is formed on a P-type silicon substrate 1, the scribe groove 8 is formed and a passivation film 3 consisting of Sin. is formed on the entire surface. Next, a reflection preventing film 4 consisting of a nitride film is formed on the surface side and a BSF layer 5 is formed by diffusing aluminum or the like on the rear surface. Thereafter, the reflection preventing film 4 and passivation film 3 of the surface electrode forming region are pattern etched. Next, after a front surface electrode 6 and a rear surface electrode 7 are formed by the metal vapor deposition method, the substrate 1 is divided along the scribe groove 8. |
