| 摘要 |
PURPOSE: To suppress the generation of an undesired cobalt silicide, that is extended towards an insulation sidewall spacer by adhering a thin film of titanium nitride or titanium tungsten on the upper surface of a cobalt film. CONSTITUTION: A covering 16 of cobalt is bonded on the surface of a wafer by sputtering. A thin layer 17 of titanium nitride or titanium tungsten is adhered to the upper surface of cobalt. After a heat treatment, undesired cobalt and titanium nitride (or titanium tungsten) is eliminated. The titanium nitride covering 17 properly suppresses the growth of the undesired cobalt silicide at a silicon oxide, which is extended to a sidewall spacer 15 during the heat treatment, thus preventing destructive failures due to the overgrowth of cobalt silicide. |
