SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

forming a field oxide for separating active layers; forming the first gate oxide on the active region of the substrate; depositing a photoresist layer for making the first MOS transistor; removing selectively the first gate oxide of the region for the second MOS tr.; removing the remaining PR and controlling the thickness of the first gate oxide by partial etching; finally forming the second gate oxide on the formed active areas and completing the usual fabrication process.