| 摘要 |
<p>PURPOSE: To solve the defective contact problem by deep via holes and to enable to form a flat conducting layer on a substrate having nonuniform surface caused by the step difference by providing pads, which are formed at the vertical lower end parts of the via holes and a lower wiring. CONSTITUTION: Interlayer contacts through via holes 100 are formed on a semiconductor substrate, wherein bending is formed by the step difference on the surface. In this semiconductor device, the via holes 100 formed in an interlayer insulating layer 18, a lower wiring 50 and an upper wiring 55 in contact through the via holes 100 and pads 35a, which are formed under the vertical lower end parts of the via holes 100 and the lower wiring 50, are provided. For example, the width of the pad 35a is set so that the width is smaller than the width of the via hole 100. Furthermore, the pad 35a is formed independently of the peripheral conducting layer or formed in a shape linking to the other wirings at the vertical lower end part of the via hole 100.</p> |
