| 摘要 |
PURPOSE:To form a semiconductor crystal thin film in a desired area of amorphous insulation film, which is electrically active with less crystal defects, without preparing for a seeded area. CONSTITUTION:An amorphous Si film 3 is provided on an SiO2 film 2 of an Si water 1, and with a resist film 5 working as a mask, P ions 6 selectively introduced as an electrically active impurities on the desired area of amorphous Si film 3, for forming a P implantation area 7. Thermal treatment is performed to crystalize at least that desired area. Selective introduction of electrically inactive impurities, such as 0, leads to the crystalization of the area other than one for the implantation. |
