| 摘要 |
PURPOSE: To prevent a leakage current from occurring by separating a semiconductor substrate from a channel layer by a space that is formed under a channel layer. CONSTITUTION: A space 23, whose sectional shape is a triangle, is formed inside an n<+> -type GaAs layer 22, and a source/drain region is formed by two separated n<+> -type GaAs layers 22. Also a channel layer 26 of an n-type GaAs is formed over the entire inclined surface of the n<+> -type GaAs layer 22 with a space structure inside. The space 23 eliminates the generation margin of a voltage difference between the electrode of an adjacent element and a semiconductor substrate 20. That is, the formation of an unwanted depletion region between the channel region 26 and the substrate 20 is prevented, thus preventing the effects of a back gate. |
