| 摘要 |
PURPOSE:To prevent troubles such as the increase of heat capacity, the requirement of time for heating, the generation of the change of properties and thermal deformation of an external terminal by irradiating a joining section, with which a metallic small-gage wire is joined, with spotlight, bringing only the joining section to the state of heating and bonding wires. CONSTITUTION:In a wire bonding method, in which the pad 1a of a semiconductor element 1 and an external terminal 2 are joined by a metallic small-gage wire 5, a joining section, with which the metallic small-gage wire 5 is joined, is irradiated with spotlight 9, only the joining section is brought to the state of heating, and the wire is bonded. A pad 1a formed onto the semiconductor device 1 is irradiated with spotlight 9 from a light source 8, and the temperature of the pad 1a is elevated to a specific temperature. A capillary 4 is lowered, and the gold sphere 5a of the metallic small-gage wire 5 is cemented with the pad 1a. An X-Y stage 10 is moved, the external terminal 2 is irradiated with the spotlight 9 of the light source 8, and the temperature of the external terminal 2 is raised to a fixed temperature. The capillary 4 is brought down, and the metallic small-gage wire 5 is joined with the external terminal 2. |
