| 摘要 |
PURPOSE:To obtain a true image signal, from which dark-current component noises are completely removed, by differentiating the cell structure in a dark-current detecting part from the cell structure in a light receiving part, and making the values of the dark currents generated in both parts equal. CONSTITUTION:A plurality of photoelectric conversion cells A and A' are provided. A large number of the photoelectric conversion cells A are used in a light receiving part IM. The other specified number of the photoelectric conversion cells A' are coated with a metal film and used in a dark-current detecting part OPB. In a solid state image pickup element having such a semiconductor constitution, the cell structure of the dark-current detecting part OPB is made different from the cell structure in the light receiving part IM. The value of the dark current generated in the dark-current detecting part OPB is made equal to the value of the dark current generated in the light receiving part IM. For example, in the case of an inter-line type CCD model, an MOS model and a charge sweep model, the area of the cell A' in the dark-current detecting part OPB comprising a photodiode PD, which is the similar type as the photodiode PD in the IM, is made larger than the cell A in the light receiving part IM. The PD in the light receiving part IM is surrounded by a channel stoppers CS and a transfer gate TG. |
