发明名称 |
A semiconductor device with sidewall channel and method of formation. |
摘要 |
A thin film transistor with self-aligned source and drain regions is fabricated, in one embodiment, by forming an opening (124) in a dielectric layer (118) which overlies a substrate (116). A semiconductive sidewall spacer (130) is formed around the perimeter (126) of the opening (124) and adjacent to the sidewall (128) of the opening (124). A first electrode region (120) is electrically coupled to a first portion of the semiconductive sidewall spacer (130) at a first location along the perimeter (126) of the opening (124) which lies only in the second lateral half of the opening (124). A second electrode region (122) is electrically coupled to a second portion of the semiconductive sidewall spacer (130) at a second location along the perimeter (126) of the opening (124) which lies only in the first lateral half of the opening(124). A dielectric layer (132) is formed adjacent to the semiconductive sidewall spacer (130). A control electrode (134) is formed adjacent to the dielectric layer (132). <IMAGE> |
申请公布号 |
EP0578926(A1) |
申请公布日期 |
1994.01.19 |
申请号 |
EP19930106106 |
申请日期 |
1993.04.15 |
申请人 |
MOTOROLA, INC. |
发明人 |
COOPER, KENT J.;KIRSCH, HOWARD C.;ROTH, SCOTT S.;HYADEN, JAMES D. |
分类号 |
H01L29/78;H01L21/336;H01L27/11;H01L29/417;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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