CONTACT TYPE PHOTOELECTRIC TRANSDUCER

摘要

The invention provides a photosensor which comprises a first electrode layer, a light-transmitting second electrode layer, and a laminate structure disposed between the two electrode layers and comprising a first photoconductive layer, a blocking layer and a second photoconductive layer for charge injection as a result of modification of the electrical properties of the first photoconductive layer and of the blocking layer, the main component of the first photoconductive layer being silicon, the blocking layer being made of a substance having a broader band gap as compared with hydrogenated amorphous silicon and composed mainly of silicon and carbon or mainly of silicon and nitrogen or mainly of silicon and oxygen, and the main component of the second photoconductive layer being silicon doped with an element(s) of the group III or V of the periodic table. In this photosensor, the bright current can be increased while the dark current remains suppressed as in the conventional photodiode type photoelectric transducer devices.