| 摘要 |
A semiconductor memory device enabling change of the output organization has a plurality of memory cell array portions each having a plurality of memory cells for storing data, a plurality of data buses for transferring data, a plurality of sense amplifiers for sensing data of a selected memory cell of the memory cell array portions, and a plurality of output gates connected to the sense amplifiers. At least two of the sense amplifiers are connected to each of the memory cell array portions through the data buses, respectively. The selection of the sense amplifiers is controlled to be activated or deactivated by control signals, to thereby change the output organization. Therefore, a delay in data transmission can be eliminated, and a high speed operation can be realized.
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