| 摘要 |
1,082,358. Semi-conductor device. STANDARD TELEPHONES & CABLES Ltd. May 20, 1965, No. 21345/65. Heading H1K. A double injection semi-conductor device includes a body of GaAs of resistivity 10<SP>8</SP> ohm/cm. and first and second metal contacts having respectively different work functions both metal contacts being on the same face of the semi-conductor body. Single diodes or a plurality of diodes may be formed on the body, the metal contacts and electrodes therefor being formed by masking techniques. The body may be a film supported on an insulating substrate with a heat sink bonded to the substrate. In an insulated gate field effect transistor Au electrodes 21 and 22 are applied to a GaAs substrate 20 using evaporating and masking techniques. Metal contacts 24 and 25 of Au and Al respectively are formed by evaporation and masking and then a layer 26 of SiO 2 and finally a grid electrode 27 of Au, the grid electrode being connected to a gold terminal. A switching diode sensitive to light in the range 5000-8500 Š is disclosed (Figs. 1 and 2, not shown). Current-voltage characteristics of the diode device are given (Figs. 3 and 4, not shown) which indicate regions of negative resistance. Indium wires may be attached to the gold electrodes by thermo-compression bonding or micro-welding. A plurality of diodes may be made in a single block of GaAs (Fig. 6, not shown). |
