发明名称 Method for producing semiconductor wafer
摘要 In a method for forming a semiconductor wafer with an orientation flat along a cleavage plane, a groove or hole is formed in the substrate on a line along which the substrate is cleaved to form an orientation flat and the substrate is treated to produce a mirrorlike surface. Then, the substrate having the mirrorlike surface is cleaved from the groove or hole to form the orientation flat. Accordingly, edges of the cleavage plane are not rounded due to the surface treatment. In addition, the substrate is easily cleaved along the cleavage plane from the groove or the hole. As a result, a semiconductor wafer having a sharp cleavage plane as an orientation flat is produced with improved yield, and alignment is performed with high precision in a subsequent process, such as photolithography.
申请公布号 US5279077(A) 申请公布日期 1994.01.18
申请号 US19920977154 申请日期 1992.11.16
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MIYASHITA, MOTOHARU;HAYAFUJI, NORIO;MIHASHI, YUTAKA
分类号 H01L21/02;B28D5/00;C30B33/00;H01L21/68;(IPC1-7):B24B49/00 主分类号 H01L21/02
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