发明名称 |
Semiconductor having diffusion region separated from the gap electrode and wiring layer |
摘要 |
A method of manufacturing a semiconductor device includes the steps of: forming a gate electrode and a wiring layer on a silicon oxide film formed on the surface of a semiconductor substrate, by using conductive material; forming a diffusion region on the surface of the semiconductor substrate by implanting impurities into the semiconductor substrate at an area other than the gate electrode and the wiring layer; and forming a film for electrically interconnecting the diffusion region and the wiring layer, using conductive material.
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申请公布号 |
US5279979(A) |
申请公布日期 |
1994.01.18 |
申请号 |
US19920885768 |
申请日期 |
1992.05.20 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHINO, KATSUYA;MAEDA, KOUSHI |
分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L29/78;(IPC1-7):H01L21/266 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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