发明名称 Output circuit for a CCD with cascode depletion MOSFET loads and a feedback capacitor
摘要 Herein disclosed is an amplification circuit for realizing a substantially high sensitivity with a simple structure. The amplification circuit comprises: a first capacitor C1 for receiving a signal charge; a source-follower circuit for receiving a voltage of the first capacitor C1; an inversion amplification circuit including a source-earth type amplification MOSFET Q5 having its gate fed with the output signal of the source-follower circuit through a second capacitor C2; a feedback third capacitor C3 connected between the gate and drain of the amplification MOSFET Q5; and a switch element Q6 for feeding the gate of the amplification MOSFET Q5 with a predetermined bias voltage while the signal charge of the first capacitor C1 is being reset. The amplification MOSFET Q5 has its drain equipped as load means with a depletion type MOSFET Q4 having its gate and source connected, and the depletion type MOSFET Q4 has its source given the same potential as the substrate potential thereof.
申请公布号 US5280511(A) 申请公布日期 1994.01.18
申请号 US19920940341 申请日期 1992.09.03
申请人 HITACHI, LTD.;HITACHI DEVICE ENGINEERING CO., LTD. 发明人 FUJII, TATSUHISA;TAKEMOTO, IWAO;HASEGAWA, ATSUSHI;KITAJIMA, KENJI;IZAWA, TETSURO;MATSUMOTO, KATSUMI
分类号 H03F3/50;G11C19/28;G11C27/04;H03K5/02;H04N5/14;H04N5/335;H04N5/341;H04N5/369;H04N5/372;H04N5/374;H04N5/378;(IPC1-7):H03K3/353 主分类号 H03F3/50
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