| 摘要 |
PURPOSE:To provide a method for manufacturing a ferroelectric thin film in which necessary components are not lost while growing a crystal inherited with excellent orientation of a base. CONSTITUTION:A method for manufacturing a ferroelectric thin film has the step of forming a PZT thin film 9 provided on an upper surface of a platinum film 7 by a sol-gel method, and comprises a step of forming films divided into six substeps in such a manner that the initial two steps sinter at a sintering temperature (750 deg.C) capable of inheriting excellent orientation of the film 7 for 20 sec of a sintering time and that the last two steps sinter at the sintering temperature (650 deg.C) lower than that of the initial two steps for longer time (30sec) than that of the initial two steps. The last two steps prevent failure of necessary components by lowering the sintering temperature, and supplement incompleteness of crystallization due to a drop of the sintering temperature by extending the sintering time. |
