| 摘要 |
PURPOSE:To reduce interference noise between bit lines by electromagnetically shielding an entire surface and an upper surface of a sidewall between the bit lines with a conductive film. CONSTITUTION:A second conductive film 6 is provided on an upper part and an entire sidewall of a bit line 3 formed on a silicon substrate 2 having a predetermined isolation region 1, a transistor through a first insulating film 4, a second insulating film (sidewall) 5, a predetermined data storage region (capacitor) consisting of a node electrode 7, a capacity insulating film 8, a plate electrode 9 is formed on its upper part, and metal wirings 10 connected to the film 6 and a predetermined lower layer region is then formed. |
