| 摘要 |
PURPOSE:To improve the element characteristics by realizing ohmic contact of a p-side electrode for a light emitting element using a p-type ZnSe layer and thereby reducing the applied voltage required for operation. CONSTITUTION:In a ZnSe-based light emitting element having a p-n junction comprising an n-type ZnSe layer 2 and a p-type ZnSe layer 3, a p-type ZnTe layer 4 is provided on the p-type ZnSe layer 3, and an Au electrode 5 is provided as p-side electrode on the p-type ZnTe layer 4. |
