| 摘要 |
<p>PURPOSE:To prevent short-circuit between a gate electrode and source/drain electrodes, improve the production yield of a thin film transistor, reduce the number of film formations by a plasma CVD device and efficiently manufacture the thin film transistor at low cost by forming a blocking film which protects an area to be the channel of an i-type semiconductor film without damaging a gate insulating film. CONSTITUTION:A blocking film 25 is formed of metal and a source electrode and a drain electrode are electrically separated using the blocking film 25 as an oxide insulating film 25a after separating an n-type semiconductor film 26. When the blocking film 25 is oxidized, data wiring 31 formed on a protecting insulating film 30 is oxidized and an oxide insulating film 31a is formed on the surface of the data wiring 31.</p> |
