| 摘要 |
PURPOSE: To shorten a hydrogenating time by plasma hydrogenating at a high temperature in a first step, and lowering to a low temperature without shutting out hydrogen plasma in a second step. CONSTITUTION: In a first step, plasma hydrogenation is conducted at a high temperature (preferably 435 deg.C or higher). In a second step, the temperature is lowered from the high temperature of the first step to a lower temperature (preferably 325 deg.C), without shutting out the plasma. The step of using the high temperature increases the diffusion of hydrogen into a polysilicon layer 2 for rapidly proceeding the hydrogenation of all devices. No dehydrogenation due to presence of the plasma occurs. In the second step, the temperature is lowered to a level (e.g. 325 deg.C) for not generating dehydrogenation, even after the plasma is shut out. Thus, rapid hydrogenation can be performed in response to a plasma generator, which can be obtained with higher temperature and shorter time.
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