| 摘要 |
<p>PURPOSE:To provide a manufacturing method of a semiconductor device which is capable of satisfactory electrochemical etching without using a high concentration diffusion layer which serves as an electrode for special electrochemical etching. CONSTITUTION:An n type epitaxial layer 36 is formed on a p type single crystal silicon wafer 35 and a p<+> diffusion layer 37, which serves as a piezoresistance layer, is formed in a specified area of the epitaxial layer inside a chip while a p<+> diffusion layer 38 is formed in a scribing line on the epitaxial layer 36 as well. With the p<+> diffusion layer 38 as an electrode, a specified area of the single crystal silicon wafer 35 is removed by electrochemical etching where a specified area of the epitaxial layer 36 is adapted to remain so that a thin wall section may be formed. Furthermore, the wafer on the scribing line is cut so as to produce chips.</p> |
