METHOD OF FABRICATING A STACKED CAPACITOR FOR SEMICONDUCTOR MEMORY DEVICE

摘要

One side or both side of a charge storing electrode is made to a pin type to be curved by itself so that the effective surface of the electrode is expanded, and the storage capacity is increased. And the steps of the charge storing electrode formed on an upper side of a gate electrode, which is connecting to a bit line, is reduced so that the connection to the bit line is easy. The dielectric layer and the plate electrode are formed on the surface of the charge storing electrode by using a mask. The contact hole is formed on an upper side of a source region by etching a nitride and an insulation layers by using a contact mask.