Highly pure hydrogen peroxide prodn. for use in semiconductor technology - by removing inorganic impurities in distilled soln. with membrane of ion exchange resin particles in desensitising polymer matrix

摘要

Prodn. of highly pure H2O2 (I), suitable for use in semiconductor technology, involves purifying H2O2 contg. only small amts. of dissolved inorg. impurities with an ion exchange resin (II). The novelty is that H2O2 (III) purified by distn. is contacted with membranes (IV) contg. (II) particles, embedded in a matrix of a polymer (V) contg. no ion exchange functional gps.. (III), pref. distilled through a borosilicate glass column, contains less than 100, esp. 10-50 ppb residual metal ions. It is contacted with and pref. filtered through (IV) contg. cation exchange (II) and then (IV) contg. anion exchange (II). (IV) contains 70-95 (wt.)% (II) particles, pref. of styrene-DVB copolymer. (III) is PTFE. USE/ADVANTAGE - (I) has the high purity required for the prodn. of 16 MB chips. The use of (IV), in which (II) is desensitised with (V), avoids the danger of decomposition of H2O2 to OH radicals and decomposition reactions between H2O2 and (II).