Monolithic integrated sensor for photoelectric incremental distance and angle measurement - has photoelectric sensor and signal processing components on silicon@ chip with regions around bonding islands recessed to depth of 50 to 100 microns

摘要

The integrated sensor consists of a silicon chip with the regions about the bond islands recessed w.r.t. the chip surface by about 50 to 100 microns. The silicon chip also contains the components of a signal processor in addition to those of the photoelectric sensor. Silicon depth etching can be performed at any stage during the wafer preparation. Connections between the bond islands and the assembly board are pref. made via bonding wires below the chip surface. USE/ADVANTAGE - For measurements with resolution from 0.1 micron to 0.01 micron. Enables further integration of signal processing components with no part of contacted chip protruding above sensitive surface.