| 摘要 |
PURPOSE:To form a P-N diode between a drain of a TFT and a cell node of a base NMOS in a P-channel TFT load type SRAM memory cell. CONSTITUTION:After an element isolation oxide film 2, an N-type polysilicon film 3, a silicon oxide film 4, a P-type polysilicon film 5, and a BPSG film 6 are formed on a silicon substrate 1, a connecting hole 7 is opened on the film 3 through the films 6, 5, 4, and a tungsten electrode 8 is buried therein. Since the film 5 and the electrode 8 are connected at the sidewall of the hole 7, the films 5, 3 can be connected without forming a P-N diode. |
