| 摘要 |
PURPOSE:To suppress a leakage current by disposing a contact of a lower electrode of one capacitor with a semiconductor substrate and a contact of a lower electrode of the other capacitor of an active region close to each active region in an X-axis direction with the substrate between the same bit lines. CONSTITUTION:This stack DRAM has a plurality of active regions 1a so formed as to be sequentially deviated by 1/4 pitch in an X-axis direction on a silicon substrate 1. A plurality of word lines 5 are so formed as to perpendicularly cross the regions 1a, and a plurality of bit lines 13 are formed in a direction perpendicular to the lines 5, and capacitors are formed at both ends of the regions 1a. Contacts 15 of the lower electrodes of the capacitor with a local wiring 10 and contacts 9 of local wirings 11 arranged at the others of the regions 1a close to an oblique direction so as to be sequentially deviated by 3/4 pitch in the X-axis direction to the region 1a with the substrate 1 are formed between the lines 13, and a distance between the lines 13 is increased. |
