Quantum well detector for electromagnetic waves.

摘要

Semiconductor, electromagnetic wave detector, comprising at least one quantum well in which there is provided a fine layer of a material with a band gap narrower than that of the quantum well layer. For example, in the case of a GaAlAs/GaAs/GaAlAs quantum well, a fine layer of InAs is provided. In this way, the difference in energy levels between the two permitted levels e1-e2 is increased. Applications: detection of short wavelengths (3-5 mu m for example). <IMAGE>