Semiconductor power module.

摘要

In a semiconductor power module, a surge voltage on a power source line of a semiconductor element for electric power control is restrained. A power source terminal PS(NP) is comprised of power source terminals PS(P) and PS(N) which are arranged adjacent each other through a plate-like insulative sheet INS1 made of insulative synthetic resin or the like sandwitched therebetween. The power source terminals PS(P) and PS(N) are each formed by a conductive plate and respectively transmit a positive and a negative power source potentials. The thickness of the insulative sheet INS1 is 0.5 mm to 1.5 mm, for instance. A reduction is made in a parasitic inductance which is present in the power source line which extends from the power source terminal PS(P) to the power source terminal PS(N) through the semiconductor element for electric power control, thereby suppressing a surge voltage which is developed between the power source terminal PS(P) and the power source terminal PS(N).