| 摘要 |
Metal or metal boride films are deposited by CVD using a metal borane cluster compound as a precursor. For a nickel film, NiCl2 is vaporized in a reactor tube in the presence of B10 H14 or another polyborane. For an aluminum film, Al(BH4)3 is formed by reacting AlCl3 with NaBH4, and using the Al(BH4)3 as a precursor borane cluster compound. The substrate is heated to a selected temperature so that the deposited film has a controlled stoichiometry of metal and boron.
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