METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A NEGATIVE IMAGE IS FORMED ON A SEMICONDUCTOR SUBSTRATE IN A POSITIVE PHOTOLACQUER

摘要

A method of manufacturing a semiconductor device, in which a layer of photolacquer containing as a photoactive component a diazo oxide is provided on a semiconductor substrate. Of this layer, parts are irradiated by a first patterned irradiation and these parts are then rendered poorly developable by an intermediate treatment. Subsequently, the lacquer layer is subjected to a second non-patterned irradiation and is then developed. According to the invention, in the parts irradiated by the first irradiation a pigment is formed, which absorbs radiation having a wavelength at which diazo oxide is photosensitive. The second irradiation is carried out with radiation of that wavelength. Thus, lacquer tracks having a rectangular profile can be obtained in a simple manner.