发明名称 |
Double channel semiconductor laser and method of fabricating it |
摘要 |
The energization current of an indium phosphide or gallium arsenide double channel semiconductor laser is confined within a laser stripe by near and far current blocking arrangements. The near current blocking arrangements are formed by a blocking junction formed in two lateral channels delimiting the stripe. The far current blocking arrangements are formed by an iron-doped semi-insulative layer grown epitaxially before the lateral channels are etched. A particular application is to the fabrication of pump lasers used in optical amplifiers of optical fiber links.
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申请公布号 |
US5278858(A) |
申请公布日期 |
1994.01.11 |
申请号 |
US19920915512 |
申请日期 |
1992.07.20 |
申请人 |
ALCATEL CIT |
发明人 |
BRILLOUET, FRANCOIS;GARABEDIAN, PATRICK;GOLDSTEIN, LEON;PAGNOD-ROSSIAUX, PHILIPPE |
分类号 |
H01S5/00;H01S5/227;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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