发明名称 Memory device comprising thin film memory transistors
摘要 A latch circuit is provided between a column switch connected to the input/output sides for selecting data lines and a tristate buffer connected to the write side of a memory array, or between the column switch and a sense amplifier connected to the readout side of the memory array. The latch circuit has a capacity corresponding to a plurality of data contents in the tristate buffer or the sense amplifier. While data set in a portion of the latch circuit is being output, the next data can be set in another portion of the latch circuit.
申请公布号 US5278790(A) 申请公布日期 1994.01.11
申请号 US19910710057 申请日期 1991.06.04
申请人 CASIO COMPUTER CO., LTD. 发明人 KANABARA, MINORU
分类号 G11C7/10;(IPC1-7):G11C11/00;G11C8/00 主分类号 G11C7/10
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