| 摘要 |
A ZnO2 voltage non-linear resistor excellent in all characteristics of life under electrical stress, current impulse withstandability, discharge voltage ratio, change rate of discharge voltage after application of current impulse and moisture absorbency contains, as additive ingredients: 0.4-1.5 mol. % bismuth oxides as Bi2O3, 0.3-1.5 mol. % cobalt oxides as Co2O3, 0.2-1.0 mol. % manganese oxides as MnO2, 0.5-1.5 mol. % antimony oxides as Sb2O3, 0.1-1.5 mol. % chromium oxides as Cr2O3, 0.4-3.0 mol. % silicon oxides as SiO2, 0.5-2.5 mol. % nickel oxides as NiO, 0.001-0.05 mol. % aluminum oxides as Al2O3, 0.0001-0.05 mol. % boron oxides as B2O3, 0.0001-0.05 mol. % silver oxides as Ag2O, and 0.0005-0.1 mol. % zirconium oxides as ZrO2, which bismuth oxides contain 30 wt. % of a (gamma)-type crystalline phase. A small-sizable ZnO2 voltage non-linear resistor having a higher varistor voltage in addition to the above characteristics contains, as additive ingredients: 0.3-1.5 mol. % bismuth oxides as Bi2O3, 0.3-1.5 mol. % cobalt oxides as Co2O3, 0.2-1.5 mol. % manganese oxides as MnO2, 0.5-1.5 mol. % antimony oxides as Sb2O3, 0.1-1.5 mol. % chromium oxides as Cr2O3, 4.0-10.0 mol. % silicon oxides as SiO2, 0.5-2.5 mol. % nickel oxides as NiO, 0.001-0.05 mol. % aluminum oxides as Al2O3, 0.0001-0.05 mol. % boron oxides as B2O3, 0.0001-0.05 mol. % silver oxides as Ag2O, and 0.0005-0.1 mol % zirconium oxides as ZrO2, which bismuth oxides contain 30 wt. % of a crystalline (gamma)-type phase.
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