| 摘要 |
<p>1,135,068. Semi-conductor device. CKD PRAHA, OBOROVY PODNIK. 18 May, 1966 [22 May, 1965], No. 22078/66. Heading H1K. A semi-conductor device comprises a planar semi-conductor element wherein pressure contacts are made by electrode contact plates to the contact surfaces of the element and wherein the plates and the surfaces are provided with a rhodium layer. A silicon diode is machined to give a specified roughness and flatness and a rhodium layer applied thereto galvanically. The layer is ground to a smaller roughness than the initial roughness using a rhodium-faced grinding tool and then another layer of rhodium applied which may or may not be ground by the tool. The contact faces of the element and the electrodes are mutually ground-in, one of the electrodes being urged by a spring exerting gradually rising pressure until the value for the pressure contacts of the element is obtained. During grinding-in, the electrodes are clamped and the semi-conductor element moved. In an alternative embodiment, the layer of rhodium is applied so thick that it may be ground level in one operation. The completed device may be encapsulated. An intermediate metal plate having a similar coefficient to the semi-conductor element may be interposed between the element and the contact plate.</p> |
