METHODS OF FORMING A LOCAL INTERCONNECT AND A HIGH RESISTOR POLYSILICON LOAD

摘要

Methods of forming local interconnects and high resistor polysilicon loads are disclosed. The local interconnects (74) are formed by depositing a layer of polysilicon (70) over CoSi2 (62) in partially fabricated semiconductor wafers. The polysilicon is then coated with cobalt and annealed to form a second layer of CoSi2. The method can be expanded to form a high resistor polysilicon load by depositing and patterning an oxide layer (64) to form contact windows before application of the polysilicon layer (70). Another oxide layer (78) is deposited over the polysilicon (70) and patterned before application of the cobalt layer (82) to define the areas which create the resistor load.