| 摘要 |
<p>It is an object of the present invention to provide a method of manufacturing a semiconductor wafer, whereby deterioration of a micro-roughness in a low temperature range in hydrogen atmospheric treatment, and increase of a resistivity due to outward diffusion of an electrically active impurity in a high temperature range are solved, and in the heat treatment in a hydrogen gas atmosphere, the concentration of gas molecules in atmosphere such as water, oxygen and the like is brought to 5 ppm or less in water molecule conversion, a reaction in which a substrate surface is oxidized unequally and the micro-roughness is deteriorated is suppressed, and furthermore, a same kind of impurity as the electrically active impurity contained in an Si substrate is mixed into the atmosphere, and the outward diffusion of the impurity in the vicinity of the Si substrate surface is prevented to prevent variation of the resistivity.</p> |
