| 摘要 |
A non-volatile programmable memory having: a plurality of unit cells disposed therein, each of said unit cells including an anti-fuse that can write in data by electrically breaking down an insulating film, a select transistor individually connected to said anti-fuse, and a wiring connected to each anti-fuse; and an auxiliary transistor connected between mutually adjacent unit cells, said auxiliary transistor having a source region and a drain region respectively connected between said anti-fuse and said select transistor together incorporated in mutually adjacent unit cells.
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