| 摘要 |
1,136,447. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 23 Nov., 1966 [26 Nov., 1965], No. 52384/66. Heading H1K. [Also in Division C7] A conductive base support for a semiconductor device is made by cathode sputtering successive layers of Nb and Ni, e.g. each 0À1 to 1 micron thick, on to a ceramic body, e.g. of alumina 4, heating the coated body, e.g. at 1100‹ to 1200‹ C. for ¢ hour in a non-oxidizing atmosphere, e.g. H 2 or cracked ammonia or vacuum to interdiffuse the Nb and Ni, and then cathode sputtering a layer 6 of Au, e.g. 0À1 to 1 micron thick, on to the interdiffused layer 5. A transistor comprising a Si semi-conductor wafer 1 provided with emitter and collector electrodes 2, 3 may be soldered in air to the base support, which may be produced as a metal pattern using mechanical masking during the sputtering or removing metal from the areas where it is not required by grinding, abrasion or etching. |
