| 发明名称 |
Use of oxalyl chloride to form chloride-doped silicon dioxide films on silicon substrates. |
| 摘要 |
<p>A process of forming chlorine-doped silicon dioxide films on a silicon substrate comprises oxidizing the silicon substrate in the presence of a chlorine source, thereby forming the chlorine-doped silicon dioxide film on the silicon substrate, the chlorine source being oxalyl chloride.</p> |
| 申请公布号 |
EP0577262(A2) |
申请公布日期 |
1994.01.05 |
| 申请号 |
EP19930304143 |
申请日期 |
1993.05.27 |
| 申请人 |
OLIN CORPORATION |
发明人 |
MCGEARY, MICHAEL J.;BOEGLIN, HERMAN J. |
| 分类号 |
C23F1/44;H01L21/00;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
C23F1/44 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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