| 摘要 |
<p>The vertical junction field-effect transistor comprises a semiconductor structure including an internal semiconductor layer (23, 26) extending within the channel region (7) between the gate region (4, 31), this internal layer being produced from a semiconductor material, having a narrower forbidden band width (Eg2) than that of the material forming the channel and gate regions, and the same type of conductivity (N) as that of the channel region; the heterojunction formed between this internal layer and the channel region exhibits a band discontinuity situated in the valence band in the case of a channel of N type, or in the conduction band in the case of a channel of P type. <IMAGE></p> |
