发明名称 Plasma etching device for semiconductor disc - has strip line resonator providing electromagnetic field in which semiconductor disc is positioned
摘要 The plasma etching device has a reaction chamber (1) with a gas inlet (2) and a pump connection (3), enclosing a strip line resonator (4,5,8) coupled to a HF supply for providing an electromagnetic field in which the semiconductor disc (9) is located. The strip line resonator has a strip line (4) and an opposing parallel metal surface (8), with the semiconductor disc located between them. The lateral measurement of the strip line parallel to the metal surface is greater than the distance between them. The strip line is coupled to earth via a tuning element (5) e.g. a variable capacitor. ADVANTAGE - Simple and compact arrangement. Magnetic field compacts plasma so that pressure can be reduced. Very homogenous spatial magnetic field between stripline and metal surface.
申请公布号 DE4221907(A1) 申请公布日期 1994.01.05
申请号 DE19924221907 申请日期 1992.07.03
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 ENGELHARDT, MANFRED, DR., 8152 FELDKIRCHEN-WESTERHAM, DE
分类号 H01J37/32;H05H1/46;(IPC1-7):H01J37/32;H01P7/00 主分类号 H01J37/32
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