| 摘要 |
PURPOSE:To remarkably increase the reading capacitive change of a pn-junction variable capacitance diode by independently forming a reverse bias applying electrode for controlling the width of a depletion layer and a reading electrode for picking up capacitive change. CONSTITUTION:A p-type region 12 is formed on the upper center of an n-type semiconductor monocrystal line bulk 11 to produce the first pn-junction, and a capacitance reading electrode 13 made of metal material is coated on the region 12. Then, p-type regions 14, 15 are formed in space from the region 12 at both sides of the region 12 on the bulk 11 to similarly produce the second the third pn-junctions therebetween, bias electrodes 16, 17 made of metal material are mounted on the regions 14, 15, respectively. Opposite ohmic electrode 18 is coated on the back surface of the bulk 11. Thus, the second and third pn-junctions are reversely biased to alter the width of the depletion layer 19 produced undet the first pn-junction so as to pick up the capacitive change remarkably increased from the electrode 13. |
