| 摘要 |
Electrical connection to an A1 electrode of a semiconductor is made by the attachment of a copper wire. A copper ball 8a formed by flaming out one end of a copper wire 8 is moved downward to an A1 electrode pad 5 on a semiconductor chip and brought into contact for less than 150 ms. Plastic deformation then occurs so that the copper ball is pressed to the aluminium electrode pad in such a manner that the height of the copper ball (h, Fig. 8) is 25 mu m or less. It is therefore possible to decrease the work hardening property of the Cu ball and prevent A1 exclusion when the Cu ball is bonded to the A1 electrode pad. <IMAGE> |
